M. Amar, A. N. Jones, J. S. Colligon, Manchester Metropolitan University, Manchester, United Kingdom; W. Ahmed, M. J. Jackson, Purdue University, West Lafayette, IN; H. Taylor, Tennessee Technological University, Cookeville, TN
The growth of diamond on Steel and Ti6Al4V alloy substrates is problematic due to the thermal mismatch and the high carbon diffusion rate into the ferrous substrates. In order to overcome nucleation and adhesion problems we have employed a simple approach of using TiN and TiC interlayers between the diamond and steel substrates. Diamond films have then been deposited using a modified hot filament chemical vapour deposition system. The TiN and TiC interlayers were of a thickness varying from 50 to 500 nm. Interlayers were deposited using Ion beam and magnetron sputtering. The thickness and chemical stoichiometric ratios were confirmed using Rutherford Back Scattering (RBS). Diamond film growth was performed using a modified hot-filament Chemical Vapour Deposition (HFCVD) System. Scanning electron Microscopy (SEM), x-ray diffraction (XRD) and Raman spectroscopy were used in order to characterise the structure, surface morphology and composition of the diamond and interlayer films.
Summary: The growth of diamond on Ti6Al4V alloy substrates is problematic due to the thermal mismatch and the high carbon diffusion rate into the ferrous substrates. In order to overcome nucleation problems, a simple approach of using TiN/TiC interlayers between the diamond and steel substrates has been developed.
