Tutorial: Microelectronics Failure Analysis
Tutorial: Microelectronics Failure Analysis
Monday, September 28, 2026: 2:40 PM
306A (Québec City Convention Centre)
This tutorial presents a structured, end-to-end overview of the microelectronics failure analysis (FA) workflow, emphasizing how a disciplined, stepwise methodology enables efficient root cause identification in modern semiconductor devices. The workflow begins with failure verification using electrical test systems to confirm reproducibility, followed by non-destructive package analysis (optical microscopy, X-ray, acoustic imaging) to screen for assembly- and package-level anomalies. Guided sample preparation—including decapsulation and backside thinning—provides access to device structures, enabling progressive narrowing of the failure from system-level symptoms to die-level suspect regions. Electrical characterization techniques, including shmoo analysis, are highlighted as key tools for translating observed failure signatures into physically meaningful hypotheses tied to process and material variations.
Building on this workflow, the tutorial focuses on global fault localization and electrical fault isolation as the critical bridge between device behavior and material-level defects. Advanced localization techniques such as soft defect localization (SDL) and laser-assisted device alteration (LADA), complemented by photon emission microscopy, OBIRCH, lock-in thermography, and laser voltage probing, are presented in the context of their role in the FA flow to iteratively converge on defect sites. The workflow concludes with electrical and physical characterization using techniques such as nanoprobing, SEM, TEM, and FIB-based analysis to confirm defect mechanisms and link them to root causes such as broken interconnects, oxide degradation, resistive vias, or epitaxial inconsistencies. By framing these techniques within a coherent FA workflow, the tutorial provides material engineers with a practical understanding of how process-induced defects manifest in electrical behavior and how systematic analysis enables targeted process improvements and enhanced device reliability.
Building on this workflow, the tutorial focuses on global fault localization and electrical fault isolation as the critical bridge between device behavior and material-level defects. Advanced localization techniques such as soft defect localization (SDL) and laser-assisted device alteration (LADA), complemented by photon emission microscopy, OBIRCH, lock-in thermography, and laser voltage probing, are presented in the context of their role in the FA flow to iteratively converge on defect sites. The workflow concludes with electrical and physical characterization using techniques such as nanoprobing, SEM, TEM, and FIB-based analysis to confirm defect mechanisms and link them to root causes such as broken interconnects, oxide degradation, resistive vias, or epitaxial inconsistencies. By framing these techniques within a coherent FA workflow, the tutorial provides material engineers with a practical understanding of how process-induced defects manifest in electrical behavior and how systematic analysis enables targeted process improvements and enhanced device reliability.
See more of: Tools & Techniques (Joint EDFAS and FAS Programming) II
See more of: Failure Analysis Society (FAS) at IMAT
See more of: Failure Analysis Society (FAS) at IMAT
