D. Isakov, National University of Singapore, Singapore, Singapore

Summary: A Scanning Near-field Photon Emission Microscope was applied for analysis of photon emission distribution from unipolar and bipolar silicon devices with resolution better than 50 nm for the wavelength range from 1000 nm to 1400 nm. A new probe was designed to achieve high spatial resolution, high sensitivity and high repeatability. Using the common knife-edge criterion, the spatial resolution of the images was estimated to be as small as 30 nm.