M. Bouya, D. CARISETTI, P. DELAQUEZE, J. C. Clement, Thales Research and Technology, Palaiseau, France; P. Perdu, CNES - French Space Agency, Toulouse, France

Summary: HBT (Heterojunction bipolar transistor) and HEMT (High Electron Mobility Transistor) III-V transistors are paying a key role for power and RF low noise applications but their failure analysis are very challenging: Active area thickness is only few nanometers, backside failure localization is mandatory because of thermal drain or metal bridge covering the front side, materials involved are a mixture of ultimate hardness and high chemical sensitivity while failure mechanisms strongly differ from Si technologies. To face these challenges, we have developed a complete approach, without degrading the component, based on Backside failure analysis by electroluminescence. Its efficiency and completeness has been demonstrated through case studies that will be discussed in detail in the final paper.