TECH2.3 Aluminum Nitride Coating Fabricated by Reactive Plasma Spraying of Al2O3

Tuesday, May 22, 2012: 11:00 AM
Room 339 AB (Hilton Americas Houston )
Mr. Mohammed Shahien , Toyohashi University of Technology., Toyohashi, Japan
Motohiro Yamada , Toyohashi University of Technology., Toyohashi, Japan
Toshiaki Yasui , Toyohashi University of Technology., Toyohashi, Japan
Masahiro Fukumoto , Toyohashi University of Technology., Toyohashi, Japan
Aluminum nitride (AlN) is attractive material for electrical and electronic applications due to its outstanding properties. Plasma spraying is a versatile technique for producing abradable and protective ceramic coatings.  However, it was difficult to fabricate AlN coating by conventional plasma spray processes. It is due to the thermal decomposition of the feedstock AlN powder during spraying without a stable melting phase. Reactive plasma spraying (RPS) has been considered as a promising technology for in-situ formation of AlN thermally sprayed coatings. The plasma spray processing of AlN coating through reactive plasma nitriding of Al2O3 powder in N2/H2 plasma was investigated in this study. It was possible to fabricate a cubic-AlN (c-AlN)/Al2O3 composite coating and the fabricated coating consists of c-AlN, α-Al2O3, Al5O6N and γ-Al2O3. Furthermore, the AlN content was improved with increasing the flight time (spray distance), due to increasing the reaction time between Al2O3 particles and the surrounding N2/H2 plasma. In order to investigate the in-flight reaction, the sprayed particles were collected into a water bath to maintain its particle features. It was clear from the microstructure and cross section observation of the collected powder that, the nitriding reaction started from the surface. During the coatings process, the sprayed particles were melted, spheroidized and reacted in the high temperature N2/H2 plasma and formed aluminum oxynitride (AlON) which have cubic structure. The particles collide, flatten, and rapidly solidified on a substrate surface. The AlON is easily nitride to c-AlN phase (same cubic symmetry). The c-AlN was formed by rapid solidification of AlON and plasma irradiation on the substrate. The high quenching rate of the plasma flame prevents AlN crystal growth to form the hexagonal phase. Furthermore, the effect of plasma gases and ambient gas on the nitriding process and coating microstructure was investigated to optimize the process.