Oxide film deposition by low power atmospheric air plasma spray equipment using hydroxide nanopowder created by hydrolysis of liquid precursor

Oxide films such as ITO, perovskite TiO2 and so on have been practically used in the field of electronics industry as conductive and semiconductor films. Since oxide films can be created under the environment including oxygen, oxide films have been created by some atmospheric film deposition processes like sol-gel method and spray pyrolysis. However, since these processes have some disadvantages (ex. low deposition rate, chemical reaction between ambient gas and substrate during operation due to its high substrate temperature and long deposition time). In this study, in order to develop a rapid oxide conductive and semiconductor film deposition process, oxide film deposition by 1kW class atmospheric solution precursor plasma spray (ASPPS) equipment was carried out. In this developed ASPPS method, since oxide nano particles were created by hydrolysis of the feedstock material (liquid precursor) occurred during transportation in the feedstock feeding system and the created particles were fed into the plasma jet, the molten nano particles were accumulated on the substrate. Besides, in order to decrease the running cost, air was used as working gas and inverter connected lead battery was used as electric power source. Consequently, in both cases of alumina and titania, dense films could be deposited successfully.