Plasma resistance study of Y2O3 coating by suspension vacuum plasma spraying

As the semiconductor industry advances, the role of plasma-resistant coating is emerging due to the high-density plasma used in the semiconductor etching process. Particle contamination generated by chemical and physical erosion of chambers and jigs in the plasma etching process causes defects in semiconductor devices, so the development of plasma-resistant coating to reduce the etching rate and particle contaminants is actively conducted with various spray coating processes. Most plasma-resistant coatings by APS(Atmospheric Pressure Spray) show a high porosity and low mechanical properties due to large powder size and short flame exposure time.

In this study, we developed a Y₂O₃-based plasma-resistant coating using suspension vacuum plasma spraying (SVPS), which uses fine powders dispersed in a solvent and injected into a vacuum plasma flame to form a dense coating. The microstructure, phase, and mechanical properties of SVPS Y₂O₃ coating were compared with the APS and VPS (Vacuum Plasma Spray) based Y₂O₃ coatings. Finally, plasma etching rates were evaluated concerning with coating process and microstructure.