Breakthroughs in SiC Coatings Using Hybrid Aerosol Deposition

Tuesday, May 6, 2025: 10:50 AM
Room 2 (Vancouver Convention Centre)
Dr. Mohammed Shahien , National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan
Dr. Kenji Nishimura , National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan
Dr. Takashi Nagoshi , National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan
Dr. Masato Suzuki , National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan
Dr. Kentaro Shinoda , National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan
Silicon carbide (SiC), known for its tendency to decompose before melting, has long posed challenges for conventional thermal spray deposition methods. Traditional Chemical Vapor Deposition (CVD), commonly used as an alternative, faces drawbacks like slow deposition rates (<1 μm/h), high substrate temperatures, and limitations in achievable coating thickness. Hybrid Aerosol Deposition (HAD) is emerging as a transformative technique for producing non-melt ceramic coatings, blending plasma assistance with room temperature impact consolidation (RTIC). This novel approach overcomes the shortcomings of both plasma spraying and aerosol deposition, paving the way for sustainable coatings with enhanced 3D capabilities.
HAD opens up new possibilities for depositing materials like SiC, which have been difficult or impossible to apply through conventional methods. This study focuses on the feasibility of SiC deposition via HAD, overcoming the challenges posed by its complex covalent bonding. Additionally, it introduces the development of a simulation model that offers crucial insights into the deformation and fracture behavior of SiC single-crystal nanoparticles under compression. The findings lay the groundwork for further innovation in SiC coatings and contribute to advancing the field of nanoscale material science.