H. Sein, D. W. Ahmed, Manchester Metropolitan University, Manchester, United Kingdom; M. J. Jackson, Purdue University, West Lafayette, IN; R. Polini, Universita’ di Roma “Tor Vergata”, Rome, Italy, Rome, Italy

Summary: Chemical vapour deposition (CVD) was used to grow adherent diamond films on titanium nitride interlayers (TiN) deposited on (110) silicon substrates. TiN film can be used as diffusion barrier. Diamond films was adhered on the TiN, however interface between Tin and Silicon has appeared to be delamination of TiN on Silicon due to diamond deposition temperature. The resulting diamond on TiN has significantly shown that the high purity diamond films was obtained.