Pulsed-DC – new perspectives for reactive sputtering

Thursday, May 4, 2017: 12:00 PM
Ballroom BC (Rhode Island Convention Center)
Pawel Lesiuk , TRUMPF Huettinger Sp. z o.o., Zielonka, Poland
Wojciech Gajewski , TRUMPF Huettinger Sp. z o.o., Zielonka, Poland
Pawel Ozimek , TRUMPF Huettinger Sp. z o.o., Zielonka, Poland
Jakub Swiatnicki , TRUMPF Huettinger Sp. z o.o., Zielonka, Poland
In this contribution the pulsed-DC power technology will be reviewed to point out the milestones of its development. Examples of industrial applications will be used to discuss the perspectives of the Pulsed-DC both for magnetron sputtering as well as for use as a BIAS in decorative and hard coating applications. To illustrate the potential of Pulsed-DC technology two process of Indium-Tin Oxide (ITO) deposition will be discussed. First, the use of broad pulsing frequency range and adjustable Off Time will be demonstrated as a cost effective and easy to apply method for reduction of the faulty wafers percentage caused by arcing. As second, an ITO deposition by superimposed RF and Pulsed-DC for display and PV applications will be presented as a powerful method for low temperature ITO deposition. Finally, the flexibility of modern pulsed-DC technology will be demonstrated using performance data of dual-functionality units. It will be demonstrated how a specially extended power characteristics allows to use one unit either as a plasma power supply or as a DC/Pulsed-DC bias voltage source. The advantages of a Pulsed-DC bias power supply will be illustrated with the results of arc rate reduction in deposition of decorative coating on a mixed metal-plastic substrates.