D. Neat, J. Kozub, Vanderbilt University, Nashville, TN; G. E. Cook, A. M. ,. Strauss, D. DeLapp, Welding Automation Laboratory Vanderbilt University, Nashville, TN

Summary: A free electron laser and a CO₂ laser were used to irradiate doped silicon wafers under various experimental conditions in an attempt to achieve controlled melting. The minimum power density to modify the surface of the silicon was determined for each laser and the surface modifications were observed.