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| Session 20: Metrology and Materials Analysis 2 | ||||
| Location: South Ballroom (Worcester's Centrum Centre) | ||||
| (Please check final room assignments on-site). | ||||
| Session Description: This session deals with the integration of low K dielectric into advanced IC devices. Two key
problems are addressed; degradation of low k materials with wafer processing and a new failure analysis method to locate TDDB failure. The concluding paper show new applications of the FIB for serial sectioning. | ||||
| Editors: | Mr. Ted Hasegawa National Semiconductor, Santa Clara, CA Felix Beaudoin IBM Mr. Michael Eskenazi Qualcomm Corporation, San Diego, CA Mr. Stanley Swieck Analog Devices, Wilmington, MA James Cargo Agere Systems, Allentown, PA Mr. Bryan Tracy Spansion, LCC, Sunnyvale, CA Mr. David Vallett IBM Systems and Technology Group, Essex Jct., VT | |||
| Session Chair: | Mr. Bryan Tracy Spansion, LCC, Sunnyvale, CA | |||
| 10:25 AM | 23.4 | Studies on Fingerprints of EDX, FTIR, XPS and TOF-SIMS Techniques | ||
| 10:50 AM | 20.2 | Low-k Time Dependent Dielectric Breakdown Failure Analysis Utilizing SEM Image Comparison for Defect Isolation | ||
| 11:15 AM | Lunch | |||