X. Chen, Semiconductor Manufacturing International (Shanghai) Corp, Shanghai, China; Q. Gao, Semiconductor Manufacturing International Corporation, Shanghai, China; M. Li, K. Chien, Semicoductor Manufacturing International Co., Shanghai, China; C. Niou, Semiconductor Manufacturing International (Beijing) Corp, Beijing, China

Summary: In this work, deformation mechanism of low K dielectric film under E-beam was discussed. And the influence of deformation on low K dielectric film etching recipe development was investigated. To provide meaningful data for process development, numerical analysis was introduced to failure analysis procedure. A correction factor was applied to calculate and modify the true value of low K dielectric film thickness after E-beam exposure. SEM analysis conditions for imaging low K dielectric film were optimized to decrease deformation.