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Wednesday, November 15, 2006

Coupling C-AFM with Nano-Probing Technique for Further Junction Leakage Analysis

C. M. Shen, Taiwan Semiconductor Manufacture Company, Ltd., Taiwan, Hsin-Chu, Taiwan; T. C. Chuang, C. M. Huang, S. C. Lin, J. F. Chang, Taiwan Semiconductor Manufacture Company, Ltd., Tainan, Taiwan

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Summary: To couple C-AFM and Nano-probing would be able to acquire more electrical information to help concretizing ratiocination based on the characteristic of semiconductor device. In our experiment, the most significant matter was to reveal the inside story of faking junction or gate leakage. And a cunning defect hidden at the corner of active region and STI was discovered by this methodology.