S. L. Tan, K. W. Ang, K. H. Toh, D. Isakov, Y. C. Yeo, D. S. H. Chan, J. C. H. Phang, National University of Singapore, Singapore, Singapore; L. S. Koh, C. M. Chua, SEMICAPS PTE LTD, Singapore, Singapore, Singapore

Summary: Near IR Photon Emission Spectroscopy were performed on 60 nm strained and unstrained nMOSFETs. There are significant differences between the spectra of the strained and unstrained nMOSFETs. These differnces could be due to the strain in the channel of the strained nMOSFETs