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Tuesday, November 6, 2007 - 1:30 PM

Effects of Backside Circuit Edit on Transistor Characteristics

R. K. Jain, T. R. Lundquist, Q. S. Wong, Credence Systems Corp., Sunnyvale, CA; T. Malik, DCG Systems Inc., Fremont, CA

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Summary: The IC community has often wondered about the effects of a backside circuit edit using a FIB on IC behavior. Reliability of silicon device structures, transistors and diodes, are investigated by monitoring intrinsic parameters before and after and though each step of the circuit modification.