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Tuesday, November 6, 2007 - 1:55 PM

FIB Backside Circuit Modification on Device Level Allowing to Access Every Circuit Node with Minimum Impact on Device Performance by use of Atomic Force Probing

R. Schlangen, TUB Berlin Institute of Technology, Berlin, Germany; U. Kerst, C. Boit, TUB Berlin University of Technology, Berlin, Germany; S. Schomann, B. Krueger, Infineon Technologies, Munich, Germany; R. K. Jain, T. Malik, T. Lundquist, Credence Systems Corporation, Sunnyvale, CA

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Summary: Direct measurements, connecting to central circuit nodes without changing the performance of the circuitry are critical in modern FA but often impossible for recent IC technologies. This paper shows new methods based on FIB backside circuit edit, allowing to reach every circuit node existing on device level and discusses the offered options for probing and discrete characterization.