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Wednesday, November 5, 2008

The failure analysis of specific source-to-drain dislocation and case study

C. H. Wang, S. W. Lai, C. Y. Wu, B. T. Chen, J. Y. Chiou, J. H. Chou, Taiwan Semiconductor Manufacture Company, Ltd., Taiwan, Tainan, Taiwan

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Summary: Many process parameters affect the device behaviour and cause the front-end defect. Simply, the failure are two types: high-resistance and leakage, especially the leakage mode defect is difficult to inspect. Although conductive atomic force microscopy and six probes nano-probing are popular tools for front-end failure inspection, some specific defects still need more effort. We will demonstrate the electrical phenomenon and analysis of crystalline defect.