ISTFA Home   •   Exposition   •   To Register   •   ASM Homepage
Back to "Session 5: Circuit-Edit " Search
  Back to "Symposium" Search  Back to Main Search

Tuesday, November 4, 2008 - 3:35 PM

An Analysis of Tungsten FIB-made Via Resistance

D. W. Niles, J. Meyer, R. W. Kee, Avago Technologies, Fort Collins, CO; M. DiBattista, FEI Corporation, Hillsboro, OR

View in WORD format

Summary: Avago and FEI have collaborated to study and measure the resistances of multiple W vias deposited by a FIB, using a unique wafer thin-film structure. We will present the measured resistances compared to a classical model.