C. L. Huang, Y. H. Shu, United Microelectronics Corporation, Ltd., Hsinchu, Taiwan

Summary: Conventional localization techniques such as Optical Beam Induced Resistance Change (OBIRCH) or photoemission microscopy (EMMI) sometimes fail when applied to power semiconductor devices. In this paper, We present a novel FA technique for failure localization. It is a powerful failure localization technique, where using a novel method in OBIRCH system is utilized to find hot spot. We will focus on this hot spot to do detail electrical analysis which includes Conductive Atomic Microscopy (C-AFM) and nano-probing . Finally, the failure mechanism was illustrated with nano-prober and Cross-Section TEM.