S. M. Kim, Hynix Semiconductor Inc., Icheon-si, Kyungki-do, South Korea

Summary: In this work, we have analyzed the single shared column fail on DRAM technology using nano probing system. If we have tried to analyze that failure only by the physical method, we couldn’t have found the correct fail mechanism. We could have sufficiently gathered the electrical information of fail transistor by nano probing system in advance, and then have revealed the mechanism of non-visible failure in some specific transistor.