T. S. Back, J. H. Kim, S. J. Lee, J. W. Jung, T. O. Jung, H. J. Kim, J. H. Lee, Hynix Semiconductor Inc, Icheon-si, South Korea

Summary: In recently, many difficult failures are appeared by cross sectional TEM image of only specific site. Defects were found when the SOD and HDP filled in the gap of STI according to volume expansion of SOD film. The expansion causes the increased tensile stress of the film, and this makes crystalline defects which can be found in shape of multi shared column fail in the sense amp regulating bit lines. In this paper, we introduce the electrical method of analyzing the cause of these problems. Using a common method, Cross-section analysis by FIB TEM, we inspected the dislocation. When it comes to the difficult to analyze, we made a pillar type of specimens by utilizing a 3D rotation holder. Then, the specimens were totally analyzed with the Rotation Imaging Method.