ISTFA Home   •   Exposition   •   To Register   •   ASM Homepage
Back to "Session 18: Metrology " Search
  Back to "Symposium" Search  Back to Main Search

Thursday, November 6, 2008 - 1:35 PM

SEM Si Doping Contrast Enhancement Using Sample Charging

Y. W. Hsieh, J. D. Russell, P. Y. Chen, Inotera Memories, Inc., Taoyuan, Taiwan

View in WORD format

Summary: Using the surface insulator to enhanced dopant contrast.It differentiates SE (secondary electron) emission intensity from p-type and n-type doped regions to enhance dopant contrast. Dopant contrast is also influenced by imaging position and scanning time.