F. Zhang, T. Duryea, Texas Instruments Inc., Dallas, TX; C. Lewis, Texas Instruments, Dallas, TX

Summary: Two cases of high temperature failure analyses are presented. In both cases an on-chip “heater” – power MOSFET was used to achieve high temperature for global fault isolation or block/transistor level nodal analysis. The “heater” provides a quick way of changing the device temperature without significantly modifying the bench setup. In both cases, the results show improved probability of successfully isolating the fail site, by performing OBIRCH analysis and nodal analysis.