I. Österreicher, U. Rossberg, S. Eckl, Infineon Technologies Dresden GmbH & Co. OHG, Dresden, Germany

Summary: The paper focuses on how Active Voltag Contrast and Seebeck Effect Imaging yield different information and how they complement each other when applied to high resistive chains of interconnections. Only the combination of AVC and SEI delivers the complete view on resistive interconnection issues and covers the full resistance range. Active Voltage Contrast allows localization of resistive interconnections under conditions that have previously prevented successful analysis, especially contacts on substrate or chains with slightly increased resistance. Seebeck Effect Imaging provides additional lateral resistance mapping in case of soft opens and makes differences between the interconnections visible with very high sensitivity.