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Session 3: Failure Analysis Process I | ||||
Location: Meeting Room E145 (Oregon Convention Center ) | ||||
(Please check final room assignments on-site). | ||||
Session Description: | ||||
Session Chair: | Mr. David Burgess Accelerated Analysis, Half Moon Bay, CA | |||
12:20 PM | Active Voltage Contrast and Seebeck Effect Imaging as Complementary Techniques for Localization of Resistive Interconnections | |||
12:45 PM | A Logical Problem Solving Process for High Via Resistance Root Cause Analysis | |||
1:10 PM | Vdd Leakage Analysis by a Combination of Various Failure Analysis Techniques | |||
1:35 PM | Break | |||
1:45 PM | Physical Failure Analysis Techniques and Studies on Vertical Short Issue of 65nm Devices | |||
2:10 PM | Fast root cause analysis based on electrical defect localization | |||
2:35 PM | Failure Analysis for Gate Oxide Breakdown | |||
3:00 PM | Break |