X. F. F. Chen, M. Li, Q. Guo, K. Chien, Y. Gao, Semicoductor Manufacturing International Co., Shanghai, China

Summary: Two VBD failure cases were studied in this work. To overcome the EFA and PFA limitation, comparison analysis was applied to identify the root cause of VBD failure. In addition, new lapping down method was used to access the capacitance.