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Thursday, November 6, 2008 - 1:10 PM

Dopant Analysis on advanced CMOS technologies

F. Siegelin, A. Duebotzky, B. Danzfuss, S. Schoemann, Infineon Technologies, Munich, Germany

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Summary: We will present the use of SIMS with high lateral resolution (nanoSIMS), chemical etching, TEM and SSRM for imaging implants in cross section an plan view direction.