E. Hendarto, S. L. Toh, P. K. Tan, Y. W. Goh, J. L. Cai, Y. Z. Ma, Z. H. Mai, J. Lam, J. Sudijono, Chartered Semiconductor Manufacturing Pte. Ltd., Singapore, Singapore

Summary: FIB marks created to aid in failing site identification for nanoprobing have to be carried out with extreme caution. The Ga+ ions irradiated on the sample are sufficient to induce interface traps dominantly, shifting the electrical parameters drastically. For devices in the nanometer regime, charge neutralization with the use of a gate diode during FIB milling may no longer be feasible.