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Sunday, November 2, 2008 - 1:00 PM

Failure Localization with Active and Passive Voltage Contrast in FIB and SEM

R. Rosenkranz, Qimonda Dresden GmbH & Co. OHG, Dresden, Germany

The voltage contrast localization methods became widely accepted in the semiconductor failure analysis community during the last decade and nearly all labs make use of it. Nevertheless, there is a lack of a comprehensive overview over all phenomena related to this subject. I could imagine, that the ISTFA audience is interested in a tutorial about the multiple advantages, possibilities and limits of VC failure localization.