SCAN is a technique to locate a failure to a specific set of logical nets. Often the result is a set of nets too large in number to be helpful or too long to be useful. Even when the net is of reasonable size, more information about the defect is important to further isolate the defect. Nondestructive techniques well known in the semiconductor industry can be used to compliment the SCAN results. Techniques such as thermally induced voltage alternation (TIVA) or photon emission (PE) can correlate an area of the die to the failing mode. Oddly enough, there have been instances where C-mode scanning acoustic microscopy (C-SAM) has helped compliment the SCAN data, even though the technique does not measure the electrical properties of the device under test. Case studies will be presented showing how these techniques compliment SCAN. The physical failure analysis results will be given for the case studies discussed.