The 35th International Symposium for Testing and Failure Analysis (November 15-19, 2009) of ASM

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User's Group 3: FIB
Location: Meeting Room J1-J2 (San Jose McEnery Convention Center)
(Please check final room assignments on-site).
Session Description: Process (defect) scaling and beam induced sample damage continue to be the primary attributes driving new development in FIB technology and applications today. In this years ISTFA FIB UG we will discuss some of the challenges and novel solutions for TEM prep, defect x-sectioning, and circuit modification, for the 45nm process node and beyond.