B. Niu, P. Pardy, T. M. Eiles, J. Davis, Intel Corp., Hillsboro, OR; M. Ortega, Intel Corp, Folsom, CA; G. Yampolski, Intel Corp, Haifa, Israel

Summary: We report, for the first time, two photon absorption (TPA) using a CW 1340 nm laser combined with high numerical aperture liquid & solid immersion lens (LIO & SIL), and we observed for the first time TPA laser assisted device alteration (LADA) on silicon based CMOS 32 nm MPU and project its capabilities can be extended to future generation CMOS technologies.