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Wednesday, November 17, 2010
11.7

Design Rule of Microchip Al Bondpad & Optimization of Bonding Process in Wafer Fabrication

C. Shuting, Y. N. Hua, GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore

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Summary: In this work, we show a pFET failure caused by inappropriate bond pad/bond wire size as well as electrostatic damage during wire bonding. Based on the failure symptom and the lab experimental works, a possible failure mechanism of the high gate leakage and the bondpad design rule & bonding conditions will be proposed & discussed.