J. C. Lin, United Microelectronics Corporation, Hsin-Chu, Taiwan; L. H. Chen, United Microelectronics Corporation, Tainan, Taiwan; W. S. Wu, United Microelectronics Corporation, Ltd., Tainan County, Taiwan

Summary: A scanning electron microscopy (SEM) nano-probing system is used in this study to clarify nickel silicide phase beyond process window. According to the nano-probing electrical analysis result and the cross-sectional transmission electron microscopy (TEM) image, phenomena of junction leakage, high resistance, and a larger nickel silicide area could be observed at failure site. Otherwise, the reported study is cited to confirm nickel silicide phase transformed from nickel mono-silicide (NiSi) by the comparison of sheet resistance and silicon consumption. Consequently, nickel silicide beyond process window could be verified immediately.