Site-Specific Atom Probe Tomography on Semiconductor Devices
Site-Specific Atom Probe Tomography on Semiconductor Devices
Wednesday, December 9, 2020: 1:30 PM
Summary:
We present an advanced sample preparation technique for Atom Probe Tomography (APT). With the proposed method we have been able to make a site-specific APT sample from semiconductor device (FinFET gate region) with the optimal geometry (tip shape) and minimal amorphization damage.
We present an advanced sample preparation technique for Atom Probe Tomography (APT). With the proposed method we have been able to make a site-specific APT sample from semiconductor device (FinFET gate region) with the optimal geometry (tip shape) and minimal amorphization damage.