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Tuesday, August 2, 2005 - 3:30 PM
SES .5

Air-Pressure Effect on Room Temperature Hydrogen Sensitivity of Semiconductor Tin Oxide Based Thin Film Micro-Sensor

S. Shukla, C. Drake, H. J. Choe, S. Seal, University of Central Florida, Orlando, FL; L. Ludwig, Kennedy Space Center, Titusville, FL

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Summary: Sol-gel derived nanocrystalline indium oxide-doped tin oxide thin film has been deposited on the microelectromechanical systems (MEMS) devices and utilized for room temperature hydrogen sensing application. The effect of air-pressure and ultraviolet (UV)-radiation exposure on the room temperature hydrogen sensing characteristics of the present micro-sensor device has been systematically investigated.