Dislocation induced leakage of p+-implanted ESD test macros in 90nm technology
G. Zimmermann, Infineon Technologies Taiwan Co., Ltd., Hsinchu City, Taiwan; W. T. Chang, H. Tang, H. Ou, UMC, Hsin-Chu, Taiwan; P. Riess, Infineon Technologies, Munich, Germany; H. Cerva, Siemens AG, Munich, Germany
