A Novel Electrical Test by C-AFM to Differentiate Gate-to-S/D Gate Oxide Short from non-Gate Oxide Short Defect in Real Products

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Thursday, November 18, 2004 - 1:30 PM
24.3

A Novel Electrical Test by C-AFM to Differentiate Gate-to-S/D Gate Oxide Short from non-Gate Oxide Short Defect in Real Products

C. P. Lin, C. H. Wu, C. C. Ting, Taiwan Semiconductor Manufacturing Co., Hsin-Chu, Taiwan

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