Part II: This section discusses the impact on failure electronics by short channel transistor effects. The interactive effects aggravated by scaling forces several tradeoffs in the design that impact detction and location of failure sites. Statistical variation, cross-talk, ground bounce, IR droop, resistive vias and contacts, sensitivity of performance to small changes in power supply voltage, clock frequency, and temperature. An emphasis will be on how detection and location of failure sites is made more difficult by these advanced technology effects.