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| Session 13: Metrology and Materials Analysis 1 | ||||
| Location: Jr. Ballroom (Worcester's Centrum Centre) | ||||
| (Please check final room assignments on-site). | ||||
| Session Description: The purpose of this session is to exchange novel materials analysis methods as applied to the failure analysis of IC devices.
Expecailly welcome are talks dealing with the application of advanced matreials analysis techniques or the application of standard technqiues applied in a new way. | ||||
| Editors: | Mr. Ted Hasegawa National Semiconductor, Santa Clara, CA Felix Beaudoin IBM Mr. Michael Eskenazi Qualcomm Corporation, San Diego, CA Mr. Stanley Swieck Analog Devices, Wilmington, MA James Cargo Agere Systems, Allentown, PA Mr. Bryan Tracy Spansion, LCC, Sunnyvale, CA Mr. David Vallett IBM Systems and Technology Group, Essex Jct., VT | |||
| Session Chair: | Mr. Bryan Tracy Spansion, LCC, Sunnyvale, CA | |||
| 1:45 PM | 13.1 | PLENARY TALK: Scanning Electron Microscope Induced Electrical Breakdown of Tungsten Windows in Integrated Circuit Processing | ||
| 2:10 PM | 20.3 | Contrast Mechanisms and Three Dimensional Imaging by Focused Ion Beam Analysis of Microelectronic Devices | ||
| 2:35 PM | 13.2 | Semiconductor Inter-Material Analysis using an FIB Sample Preparation Method and Auger Depth Profiling | ||
| 3:00 PM | 13.3 | Identification and Characterization of Ultra-thin (<100 nm) Flakes Using a Combination of Face-Lapping, High Energy (10 kV) SEM Voltage Imaging, and TEM | ||
| 3:25 PM | Open | |||
| 3:50 PM | Break | |||