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| Session 23: Metrology and Materials Analysis 3 | ||||
| Location: South Ballroom (Worcester's Centrum Centre) | ||||
| (Please check final room assignments on-site). | ||||
| Session Description: This is a "non-standard" techniques session with papers illustrating how less common analytical techniques can be used to advantage in IC failure analysis. The concluding papers cover amorphization during TEM sample prep and a comparison of Auger and XPS for nitrogen analysis in gate oxides. | ||||
| Editors: | Mr. Ted Hasegawa National Semiconductor, Santa Clara, CA Felix Beaudoin IBM Mr. Michael Eskenazi Qualcomm Corporation, San Diego, CA Mr. Stanley Swieck Analog Devices, Wilmington, MA James Cargo Agere Systems, Allentown, PA Mr. Bryan Tracy Spansion, LCC, Sunnyvale, CA Mr. David Vallett IBM Systems and Technology Group, Essex Jct., VT | |||
| Session Chair: | Mr. Bryan Tracy Spansion, LCC, Sunnyvale, CA | |||
| 12:40 PM | 23.1 | Advanced Analytical Chemistry Techniques Enable Rapid, Cheap and Concise Electronic Failure Analysis | ||
| 1:05 PM | 23.2 | A Study of the Radiation Damage at the Opened/Un-Opened Contact of a Deep Trench Capacitor DRAM | ||
| 1:30 PM | 23.3 | A Correlation Study Between XPS and AES Quantitative Analysis of Nitrogen Concentration in Gate Oxide | ||
| 1:55 PM | Open | |||
| 2:20 PM | Break | |||