C. Hawkins, University of New Mexico, Albuquerque, NM
Part I is a review of CMOS electronic theory that applies to failures is followed by a description of the behaviors of open and bridging defects. These behaviors depend mostly on defect location and size of the defect. Parametric failures are a third class of failure with entirely different properties. These failures are very dependent on environmental conditions (VDD, temperature, clock frequency) and interdie statistical variation.