This workshop reviews conventional and new SEM techniques for IC analysis and new SOM analysis methods. All of these techniques can be performed on a standard SEM or SOM (using the proper laser wavelengths). The use of advanced electron beam test systems will also be discussed. The goal is to provide beneficial information to both novice and experienced failure analysts. Topics are: 1) Standard techniques: secondary electron imaging for surface topology, voltage contrast, capacitive coupling voltage contrast, backscattered electron imaging, electron beam induced current imaging, and x-ray microanalysis; 2) New SEM techniques: novel voltage contrast applications, resistive contrast imaging, and charge-induced voltage alteration (both high and low energy versions); and 3) new SOM techniques: light-induced voltage alteration, thermally-induced voltage alteration, Seebeck Effect imaging, and soft defect localization.