Focused Ion Beam (FIB) tools have become a ubiquitous and indispensable part of modern semiconductor Failure Analysis (FA) laboratories. The FIB is the tool of choice for a wide range of FA activities, including fault isolation, circuit edit and design debug, logical-to-physical verification, and stress-free cross sectioning. As such, they can be invaluable in reducing yield learning cycles and speeding product time-to-market. This tutorial provides an overview of some of the most common applications, with emphasis on the following: a) fault isolation with in-chamber probing, b) “wagon wheel” FIB probe pad placements for discrete SRAM cell characterization, c) Passive Voltage Contrast (PVC) for fault isolation, d) frontside and backside circuit edit for both copper and aluminum metallization on standard CMOS silicon and SOI based technologies.