Analysis of DRAM Standby Current Failure due to Hot Electron Induced Punch-through (HEIP) of PMOS transistor
M. H. Cho, Y. I. Kim, D. S. Woo, K. P. Lee, Y. J. Park, W. S. Lee, B. I. Ryu, Samsung Electronics. Co. Ltd., Hwasung-City, Gyeonggi-Do, South Korea; J. Choi, POM Group, Inc., Auburn Hills, MI
