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Wednesday, November 9, 2005 - 2:15 PM
SYMP0514.1
Transmission Electron Microscopy and Scanning Capacitance Microscopy Analysis of Dislocation-Induced Leakages in n-channel I/O Transistors
M. L. Anderson, P. Tangyunyong, T. A. Hill, C. Y. Nakakura, T. J. Headley, M. J. Rye, Sandia National Laboratories, Albuquerque, NM
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