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| Session 14: SPM Techniques 1 | ||||
| Location: Meeting Room J3 (San Jose McEnery Convention Center) | ||||
| (Please check final room assignments on-site). | ||||
| Session Description: Scanning Probe Microscopy has evolved into a mainstream analytical technique through its ability to acquire critical data relating to nanoscale device fabrication and operating characteristics. High resolution topographic analysis, deep sub-micron dopant profiling, and dielectric integrity analysis are SPM techniques routinely employed in the determination of failure mechanisms. In this session, the use of the SPM as a dopant profiling instrument is demonstrated on both field effect and bipolar devices. Atomic Force Probing, a rapidly developing hybrid technique is also covered as well as the use Electrostatic Force Microscopy for non-contact waveform acquisition. Conductive Atomic Force Microscopy is presented as a new method for the analysis of MOS devices at metal levels. | ||||
| Editors: | Dr. James Slinkman IBM Microelectronics, Essex Junction Dr. Peter Harris Multiprobe, Inc, Santa Barbara, CA Mr. Phil Kaszuba IBM Microelectronics, Essex Junction, VT | |||
| Session Chair: | Mr. Phil Kaszuba IBM Microelectronics, Essex Junction, VT | |||
| 2:15 PM | SYMP0514.1 | Transmission Electron Microscopy and Scanning Capacitance Microscopy Analysis of Dislocation-Induced Leakages in n-channel I/O Transistors | ||
| 2:40 PM | SYMP0514.2 | Scanning Capacitance Microscopy Application for Bipolar and CMOS Doping Issue in Semiconductor Failure Analysis | ||
| 3:05 PM | SYMP0514.3 | Atomic Force Probing in Analog MOSFETs Measurement | ||