Impact of Metal Pad Etch-Induced Plasma Damage on Dynamic Retention Time Degradation during High Temperature Stress in High Density DRAM Technology
D. Kim, I. G. Kim, J. Y. Noh, H. J. Lee, S. W. Lee, K. H. Yang, J. Park, D. Shin, K. Oh, SAMSUNG Electronics, Hwasung, South Korea; S. H. Park, RIST, Po-Hang, South Korea; J. H. Lee, Kwangwoon University, Seoul, North Korea
