M. Versen, University of Applied Sciences Rosenheim, Rosenheim, Germany; D. Diaconescu, J. Touzel, Infineon Technologies AG, Munich, Germany

Summary: The SDL technique is applied to a DRAM device. The measurand is not a tester signal but an analogue DUT signal (a DQ signal). Pattern engineering and preparing experiments ensure that the signal is useful and measurable. Global heating experiments are conducted and the heating effect can be observed on the oscilloscope. Local heating is realised by an IR laser scanning microscope which provide also the imaging system. The experiments are done at 100MHz and we were able to localize two transistors in a sense amplifier that cause temperature dependent pass/fail behaviour. Internal voltage measurements show that the gate voltage of these transistors is not on target which is also the reason for the temperature dependent pass/fail behaviour.